Ⅲ族氮化物发光二极管技术及其应用(英文版)

本书以作者及其研究团队多年的研究成果为基础，系统地介绍了Ⅲ族氮化物发光二极管的材料外延、芯片制作、器件封装和系统应用，内容集学术性与实用性为一体。全书共12章，内容包括：Ⅲ族氮化物LED的基本原理、材料性质及外延生长理论，InGaN/GaN多量子阱材料及蓝、绿光LED，AlGaN/GaN多量子阱材料及紫外LED，Ⅲ族氮化物LED量子效率提升技术、关键制备工艺、封装技术及可靠性分析，LED的应用，很后介绍了当前氮化物LED的一些研究前沿和热点。

Contents
1 Introduction 1
References 5
2 Basic Principles of LED 7
2.1 LED Luminescence Principle 7
2.1.1 History and Principle of Lighting Source 7
2.1.2 p-n Junction and the Principle of LED Luminescence 8
2.2 Radiation and Non-radiation Recombination 10
2.3 LED Optical and Electrical Characteristics 11
2.3.1 LED Quantum Efficiency 11
2.3.2 Radiation Spectrum 12
2.3.3 Basic Photometric Concepts in LED 14
2.3.4 Electrical Characteristics of LED 14
2.4 Principle ofWhite LED 15
2.4.1 The Principle of Three Primary Colors and Addition of Light 15
2.4.2 The Realization Method of White LED 15
References 17
3 Properties and Testing of Group III-Nitride LED Materials 19
3.1 Crystal Structure and Band Structure of Group III Nitride 19
3.1.1 Crystal Structure 19
3.1.2 Band Structure 21
3.2 Polarization Effect of Group III Nitride Materials 23
3.2.1 Polarization Effect 23
3.2.2 Influence of Polarization Effect 24
3.3 Doping of Group III-Nitride LEDMaterials 25
3.3.1 Doping of Nitride LEDMaterials 25
3.4 Test and Analysis of the Properties of Group III Nitride Materials 26
3.4.1 Structural and Morphological Analysis 26
3.4.2 Surface and Film Composition Analysis 28
3.4.3 Other Photoelectric Test Methods 30
References 32
4 Epitaxial of III-Nitride LED Materials 33
4.1 Basic Models of Epitaxial 33
4.1.1 3-D Growth Mode (Volmer-Weber Mode) 34
4.1.2 2-D Growth Mode (Frank-Vander Merwe Mode) 34
4.1.3 2-D and 3-D Mixed Growth Mode(Stranski-Krastanob Mode) 35
4.2 Substrate for Epitaxial Growth of III-Nitride LEDs(Sapphire/Si/SiC/LiAlO2/GaN) 36
4.3 Group III Nitride LED Epitaxial Technology 38
4.3.1 LPEMethod 38
4.3.2 MBEMethod 39
4.3.3 MOCVDMethod 39
4.3.4 HVPEMethod 47
4.4 Two-Step Growth Method for MOCVD Grown Nitride Materials 48
4.4.1 Surface Dynamics for Film Growth 48
4.4.2 Two-Step Growth Program for GaN/Sapphire by MOCVD 51
4.5 Influence of Growth Conditions on Epitaxial Layer Quality of Group III NitrideMaterials 53
4.5.1 Effect of Buffer Layer Growth Conditions on Material Quality 54
4.5.2 Effect of Rough Layer Growth Conditions 63
4.6 Epitaxial Technology of High Quality GaN on SiC Substrate 64
4.6.1 Basic Properties of SiC 64
4.6.2 Nucleation and Growth of GaN on SiC Substrate 66
4.6.3 Roots of GaN Stress on SiC Substrates 70
References 71
5 InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs 75
5.1 Introduction to InGaN Material System 76
5.2 Polarization Effects in InGaN/GaN Multiple Quantum WellsMaterials 77
5.2.1 Polarity of GaN-BasedMaterials 77
5.2.2 Spontaneous Polarization and Piezoelectric Polarization 78
5.3 Quantum-Confined Stark Effect 82
5.3.1 Effect on Transition Energy Levels 83
5.3.2 Effect on Luminous Intensity 84
5.4 Carrier Localization in InGaN/GaN Multiple Quantum Wells 84
5.5 Green LED and Non-polar, Semi-polar LED 86
5.5.1 Polar Surface High in Composition Green LEDs 87
5.5.2 Semi-polar and Non-polar Materials 88
5.5.3 Research Progress on Semi-polar and Non-polar LEDs 89
References 90
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs 93
6.1 Introduction of AlGaN Material System 94
6.2 Optical and Electrical Properties of AlGaN Materials 97
6.3 Epitaxial Growth and Doping Techniques for AlGaN Materials 98
6.4 Structure Design and Fabrication of UV LEDs 103
References 108
7 III-Nitride LED Quantum Efficiency Improvement Technology 113
7.1 Three Structures of LED 113
7.2 Internal Quantum Efficiency Improvement Technology 116
7.2.1 Homo-Epitaxial Growth of GaN 116
7.2.2 Multiple Quantum Wells 118
7.2.3 Active Region Doping 122
7.2.4 Electronic Barrier Layer 122
7.3 Light Extraction Efficiency Improvement Technology 124
7.3.1 Patterned Sapphire Substrate 124
7.3.2 Surface Roughening 128
7.3.3 Reflector 130
7.3.4 Flip-Chip Structure 133
7.3.5 Photonic Crystal 134
7.4 Current Injection Efficiency Improvement Technology 134
7.4.1 Current Spreading Layer 135
7.4.2 Current Distribution Theory 136
7.4.3 Current Blocking Technique 140
7.5 Droop Effect 141
7.5.1 Auger Recombination Effect 143
7.5.2 Electronic Overflow 144
References 147
8 III-Nitride LED Chip Fabrication Techniques 151
8.1 Group III Nitride LED Fabrication Process 151
8.2 Photolithography 152
8.2.1 Mask and Photoresist 153
8.2.2 Lithography Process 154
8.3 Etching Process 157
8.3.1 Etching Parameters 158
8.3.2 Wet Etching and Dry Etching 158
8.3.3 Etching of GaNMaterials 159
8.3.4 Etching of ITO and SiO2 Materials 160
8.4 Evaporation and Sputtering 161
8.4.1 Metal Evaporation 161
8.4.2 SiO2 Passivation Layer 162
8.5 Ohmic Contacts 163
8.5.1 n-type GaN Ohmic Contact 163
8.5.2 p-type GaN Ohmic Contact 164
8.5.3 Specific Contact Resistivity 165
8.5.4 Transparent Electrode Technology 166
8.6 Flip-Chip LEDs 169
8.7 Vertical Structure LEDs 171
8.7.1 Electroplating Technology 172
8.7.2 Bonding Technology 174
8.7.3 Laser Lift-Off 175
References 181
9 Packaging of Group-III Nitride LED 185
9.1 Group III Nitride LED Packaging Materials 185
9.1.1 LED Chip 185
9.1.2 Lead Frame of LED 186
9.1.3 LED Die Bonding Glue 187
9.1.4 Bonding Wire 187
9.1.5 LED Packaging Adhesive 187
9.1.6 Thermal InterfaceMaterial 188
9.1.7 Substrate Material 189
9.2 Group III Nitride LED Encapsulation Process 190
9.3 LED Packaging Technology 192
9.3.1 White LED Package Technology 193
9.3.2 UV Packaging Technology 193
9.3.3 High Power Density Packaging Technology 195
9.3.4 Wafer Level Packaging Technology 196
9.4 Package and System Cooling Technology 198
9.4.1 Packaging and System Cooling Technology 198
9.4.2 LED Thermal Testing Technology 200
9.5 Development Trend of LED Encapsulation Form 200
References 201
10 Reliability Analysis of Group III Nitride LEDs Devices 203
10.1 FailureMode and Failure Analysis 203
10.1.1 Light Decay 204
10.1.2 Sudden Failure 206
10.1.3 Packaging 208
10.2 The LED Aging Test and an Aging Mechanism 210
10.2.1 Aging Experiment and Acceleration Factor 212
10.2.2 Temperature Acceleration Test 213
10.2.3 Accelerated Electrical Stress Test 215
10.2.4 Other Factors Affecting the Lifetime 216
10.3 LED System Reliability 218
10.3.1 LED System Reliability 218
10.3.2 The Cases of Reliability Analysis in the LED Lighting System 223
References 227
11 Applications of LEDs 229
11.1 New Light Environment Technology 229
11.1.1 LED Lighting Technology Background 230
11.1.2 Basic Principles of LED Lighting 230
11.1.3 Lighting and Display and Construction of Fusion 232
11.1.4 Lighting and Outlook 233
11.2 Visible Light Communication Application System 233
11.3 LED Display 235
11.3.1 LED Display Overview 235
11.3.2 Outdoor LED Display 237
11.3.3 Small Pitch Display and Indoor Applications 239
11.3.4 Wide Color Gamut LED Back Light Technology 240
11.4 LED for Plant Breeding 241
11.4.1 Overview 241
11.4.2 Alternative Plant Lighting 244
11.4.3 Lighting Design Features 246
11.4.4 Systematic Design Trend 247
11.5 Medical Applications 248
11.5.1 Treatment of Neonatal Jaundice 248
11.5.2 Treatment of Hemorrhoids 248
11.5.3 Treatment of Wound Healing 249
11.5.4 Treatment of Oral Ulcer Inflammation 249
11.5.5 Treatment of Joint Pain 249
11.5.6 Application in Medical Beauty 249
References 250
12 Novel Nitride LED Technology 253
12.1 GaN-Based Nanorod LED 253
12.1.1 Advantages of Nanorod LEDs 254
12.1.2 Preparation Method of Nanorod LED 255
12.1.3 Application of Nanorod LED 261
12.2 Quantum Dot LED 264
12.2.1 Preparation Method of Quantum Dots 265
12.2.2 Optical Properties of Quantum Dots 266
12.2.3 Advantages and Research Status of Quantum Dot Light-Emitting Diodes 268
12.3 Surface Plasmon Enhanced GaN-Based LED 270
12.3.1 Basic Properties of Surface Plasmons 270
12.3.2 Principles of SP Coupling Enhanced LED 274
12.3.3 Coupling Methods for SP Coupling Enhanced GaN-Based LED 275
12.3.4 Surface Plasmon Application in Improving LED’s Modulation Bandwidth 277
12.4 GaN-Based Polarizing LEDs 278
12.4.1 Secondary Optical Design 278
12.4.2 The LEDs PlusMetal Grating 279
12.4.3 Nonpolar LEDs 279
12.4.4 The Edge-Emitting Polarized LEDs 281
12.4.5 Surface Plasmon Coupled Polarized LEDs 282
References 283